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ipi041n12n3 g ipp041n12n3 g ipb038n12n3 g opti mos tm 3 power-transistor features ? n-channel, normal level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? 175 c operating temperature ? pb-free lead plating; rohs compliant, halogen free ? qualified according to jedec 1) for target application ? ideal for high-frequency switching and synchronous rectification maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 2) 120 a t c =100 c 120 pulsed drain current 3) i d,pulse t c =25 c 480 avalanche energy, single pulse e as i d =100 a, r gs =25 ? 900 mj gate source voltage 4) v gs 20 v power dissipation p tot t c =25 c 300 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 value v ds 120 v r ds(on),max (to-263) 3.8 m ? i d 120 a product summary type ipb038n12n3 g ipi041n12n3 g ipp041n12n3 g package pg-to263-3 pg-to262-3 pg-to220-3 marking 038n12n 041n12n 041n12n rev. 2.2 page 1 2009-07-16
ipi041n12n3 g ipp041n12n3 g ipb038n12n3 g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.5 k/w thermal resistance, r thja minimal footprint - - 62 junction - ambient 6 cm 2 cooling area 5) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 120 - - v gate threshold voltage v gs(th) v ds = v gs , i d =270 a 234 zero gate voltage drain current i dss v ds =100 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =100 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =100 a - 3.5 4.1 m ? v gs =10 v, i d =100 a, to263 - 3.2 3.8 gate resistance r g - 1.4 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =100 a 83 165 - s 1) j-std20 and jesd22 5) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. values 4) t jmax =150 c and duty cycle d=0.01 for v gs <-5v 2) current is limited by bondwire; with an r thjc =0.5 k/w the chip is able to carry 182 a. 3) see figure 3 rev. 2.2 page 2 2009-07-16
ipi041n12n3 g ipp041n12n3 g ipb038n12n3 g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 10400 13800 pf output capacitance c oss - 1320 1760 reverse transfer capacitance c rss -61- turn-on delay time t d(on) -35-ns rise time t r - 52.0 - turn-off delay time t d(off) -70- fall time t f -21- gate char g e characteristics 6) gate to source charge q gs -52-nc gate to drain charge q gd -37- switching charge q sw -58- gate charge total q g - 158 211 gate plateau voltage v plateau - 5.0 - v output charge q oss v dd =60.1 v, v gs =0 v - 182 243 nc reverse diode diode continous forward current i s - - 120 a diode pulse current i s,pulse - - 480 diode forward voltage v sd v gs =0 v, i f =100 a, t j =25 c - 0.9 1.2 v reverse recovery time t rr - 123 ns reverse recovery charge q rr - 356 - nc 6) see figure 16 for gate charge parameter definition v r =60 v, i f = i s , d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =60 v, f =1 mhz v dd =60 v, v gs =10 v, i d =100 a, r g =1.6 ? v dd =60.1 v, i d =100 a, v gs =0 to 10 v rev. 2.2 page 3 2009-07-16
ipi041n12n3 g ipp041n12n3 g ipb038n12n3 g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 0 50 100 150 200 250 300 350 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 80 100 120 140 0 50 100 150 200 t c [c] i d [a] rev. 2.2 page 4 2009-07-16
ipi041n12n3 g ipp041n12n3 g ipb038n12n3 g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 4.5 v 5 v 5.5 v 6 v 10 v 2 3 4 5 6 7 8 9 10 0 50 100 150 i d [a] r ds(on) [m ? ] 25 c 175 c 0 50 100 150 200 250 300 02468 v gs [v] i d [a] 0 40 80 120 160 200 0 50 100 150 i d [a] g fs [s] 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 10 v 0 80 160 240 320 400 012345 v ds [v] i d [a] rev. 2.2 page 5 2009-07-16
ipi041n12n3 g ipp041n12n3 g ipb038n12n3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =100 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 2 4 6 8 10 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 270 a 2700 a 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 5 10 4 10 3 10 2 10 1 0 20406080100 v ds [v] c [pf] 25 c 175 c 25 c, 98% 175 c, 98% 10 3 10 2 10 1 10 0 0 0.5 1 1.5 2 v sd [v] i f [a] rev. 2.2 page 6 2009-07-16
ipi041n12n3 g ipp041n12n3 g ipb038n12n3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =100 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 24 v 60 v 96 v 0 2 4 6 8 10 0 50 100 150 200 q gate [nc] v gs [v] 100 105 110 115 120 125 130 135 140 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 1 10 100 1000 1 10 100 1000 t av [s] i as [a] rev. 2.2 page 7 2009-07-16
ipi041n12n3 g ipp041n12n3 g ipb038n12n3 g pg-to220-3: outline rev. 2.2 page 8 2009-07-16
ipi041n12n3 g ipp041n12n3 g ipb038n12n3 g rev. 2.2 page 9 2009-07-16
ipi041n12n3 g ipp041n12n3 g ipb038n12n3 g pg-to-263 (d2-pak) rev. 2.2 page 10 2009-07-16
ipi041n12n3 g ipp041n12n3 g ipb038n12n3 g published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. a ll rights reserved. a ttention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions o characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typical value s stated herein and/or any information regarding the application of the device, infineon technologies hereb y disclaims any and all warranties and liabilities of any kind, i ncluding without limitation warranties o non-infringement of intellectual property rights of any third p arty information for further information on technology, delivery terms and condi tions and prices please contact your neares infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types i n question please contact your nearest infineon technologies offi ce . infineon technologies components may only be used in life-suppo rt devices or systems with the express writte n approval of infineon technologies, if a failure of such compone nts can reasonably be expected to cause the failur e of that life-support device or system, or to affect the safety or effectiveness of that device or system. life suppor t devices or systems are intended to be implanted in the human bo dy, or to support and/or maintain and sustai n and/or protect human life. if they fail, it is reasonable to as sume that the health of the user or other persons ma y be endangered. rev. 2.2 page 11 2009-07-16

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